Principal Engineer, Reliability Engineering

Principal Engineer, Reliability Engineering

ADI - Analog Devices

Limerick, Ireland

The Position:

The position to be filled is for a GaN Intrinsic Reliability Engineer who will provide technical leadership and domain expertise in the reliability characterization, modeling, and qualification of GaN and Wide Bandgap (WBG) semiconductor devices. This role is critical to de-risking GaN product development (100V and 650V) and supporting ADI’s expanding high-voltage and power semiconductor roadmap, while delivering industry-leading reliability performance.

The successful candidate will act as a company-wide expert in GaN intrinsic reliability, driving methodology, influencing design decisions, and ensuring robust product qualification across multiple programs.

Main responsibilities:

• Drive GaN intrinsic reliability strategy across 100V–650V technologies, ensuring alignment with product roadmaps.
• Define and execute reliability qualification methodologies, including HTGB, HTRB, switching, and transient stress testing.
• Lead physics-of-failure (PoF) investigations, identifying degradation mechanisms and driving root-cause resolution.
• Develop and validate lifetime and reliability models (voltage, temperature, switching dependencies) for GaN devices.
• Drive product de-risking activities in collaboration with design and product teams, ensuring early reliability coverage.
• Provide technical leadership and decision-making authority on reliability risks, guardbands, and design recommendations.
• Develop and enhance intrinsic reliability test infrastructure, including ATE-based and custom stress systems.
• Define and advance next-generation reliability methodologies for GaN and wider WBG technologies (SiC, AlGaN, etc.).

Required skills:

• PhD or MSc in Physics, Electrical Engineering, or Semiconductor Engineering.
• Typically 10+ years’ experience in semiconductor reliability with significant GaN or WBG focus required.